High-Quality, Low-Cost Bulk Gallium Nitride Substrates Grown by the Electrochemical Solution Growth Method
EERE New Project
Awardee Details
Awardee
MEMC Electronic Materials, Inc.
State
Missouri
Funding
DOE Amount
$3,680,000
Recipient Amount
$920,000
This project will enable more efficient manufacturing of gallium nitride (GaN) which could reduce the cost of and improve the output for light emitting diodes, solid state lighting, laser displays, and other power electronics. Use of GaN –a semi-conductor material – holds the potential to reduce lighting energy use by 75%, electric drive motor energy use for consumer applications by 50%, electric motor energy used for transportation by 60%, and energy for information technology infrastructure power delivery by 20%.