EERE's New Projects

High-Quality, Low-Cost Bulk Gallium Nitride Substrates Grown by the Electrochemical Solution Growth Method

Awardee Details

Awardee 
MEMC Electronic Materials, Inc.
State 
Missouri

Funding

DOE Amount 
$3,680,000
Recipient Amount 
$920,000

This project will enable more efficient manufacturing of gallium nitride (GaN) which could reduce the cost of and improve the output for light emitting diodes, solid state lighting, laser displays, and other power electronics.  Use of GaN –a semi-conductor material – holds the potential to reduce lighting energy use by 75%, electric drive motor energy use for consumer applications by 50%, electric motor energy used for transportation by 60%, and energy for information technology infrastructure power delivery by 20%.